Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

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Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition

The high-temperature antioxidation behavior of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition sPEALDd with TiCl4, AlCl3, N2/H2/Ar, and NH3/H2/Ar radicals were studied. One cycle for depositing Ti0.83Al0.17N consisted of eight TiN cycles followed by two AlN cycles. After forming a 30-nm-thick Ti0.83Al0.17N film, the film was oxidized in ambient O2 at 650 °C for 30 min. The ...

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication